Price parity with silicon modules, greater demand from customers in EVs, and more capacity are driving widespread adoption. 1 of those specific properties is that gate oxides in SiC-based power devices are usually characterized by a relatively large number of interface states, resulting in the so-known as threshold-voltage hysteresis. Silicon, https://www.facebook.com/permalink.php?story_fbid=pfbid02qy5RYwv9mRHSFYwncPbxRsdtEco9SbCfbnAheuxAs1drJAu8uwWJX23DPnghtnrcl&id=61560512640678&__cft__[0]=AZVECecDFdwp9WLUavNF_NqeonZijvhHENjG_jRXUkIllE4rZhtTITKA7DzRPFiCrjUDolI-fwlu6SlV1ZocBH1QSpBAIUaos6uRPM6WHrpvENB0AOmAeSmmRHi6IjeC61mKPY3WIjRCHG32rBXdK1FipgkW4L5HdVUDxJaypqhtJVInTZ65MpOC8-z_2ill-etiShQwY4Hz3k3jBopbGrBj&__tn__=%2CO%2CP-R